Open AccessЭффект Пула--Френкеля и возможность его применения для прогнозирования радиационного накопления заряда в термическом диоксиде кремния
Author(s) -
А.А. Ширяев,
В.М. Воротынцев,
Е.Л. Шоболов
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.09.46143.8762
Subject(s) - poole–frenkel effect , ionization , thermal conduction , conduction band , materials science , silicon , atomic physics , radiation , electric field , analytical chemistry (journal) , chemistry , ion , physics , electron , optoelectronics , optics , nuclear physics , composite material , organic chemistry , quantum mechanics , chromatography
It is proposed that the Poole–Frenkel effect be applied to predict radiation-induced charge accumulation in thermal silicon dioxide. Various conduction mechanisms of thermal silicon dioxide are considered, the conditions of the appearance of the Poole–Frenkel effect in it are determined, and the characteristics of donor centers participating in Poole–Frenkel electrical conductivity are calculated. A donor center level at an energy of 2.34 eV below the conduction-band bottom is determined and the concentration of ionized donor centers of 1.0 × 10^9 cm^–3 at 400 K and a field strength of 10 MV/cm is found. It is concluded that the Poole–Frenkel effect can be applied not for prediction of the absolute value of the radiation-induced charge but for comparison of the samples in terms of the ability to accumulate it.