Open AccessВлияние глубоких центров на статистическую задержку микроплазменного пробоя в арсенид-галлиевых светодиодах
Author(s) -
В.К. Ионычев,
А.А. Шестеркина
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.08.46224.8750
Subject(s) - microplasma , gallium arsenide , optoelectronics , materials science , diode , gallium , range (aeronautics) , analytical chemistry (journal) , plasma , chemistry , physics , composite material , chromatography , quantum mechanics , metallurgy
A statistical study of the microplasma-breakdown delay in gallium-arsenide light-emitting diodes is performed. The significant effect of deep centers on the microplasma breakdown of gallium arsenide p–n junctions is detected. It is shown that the statistical delay of the microplasma breakdown makes it possible to estimate the energy spectrum of deep levels in the microplasma channel when varying the charge state of deep centers by decreasing the reverse voltage applied to the p–n junction. In the temperature range of 250–350 K, the effect of three deep levels is detected and their parameters are determined.