Open AccessМодуляция заряда германиевых МДП-структур с фторсодержащими диэлектриками
Author(s) -
М.Б. Шалимова
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.08.46223.8738
Subject(s) - dangling bond , materials science , insulator (electricity) , semiconductor , charge (physics) , charge density , metal , surface charge , optoelectronics , condensed matter physics , chemistry , silicon , physics , metallurgy , quantum mechanics
An insulator layer of ErF_3, YF_3, NdF_3, and TmF_3 was formed in n -type Ge-based MIS (metal–insulator–semiconductor) structures. It is shown that no negative effective charge is observed in these Ge MIS structures, while the degradation of electric characteristics and the rise of density of surface states leads to an increase in the positive charge. The positive charge formed at the Ge–rare-earth-element fluoride interface can compensate the negative charge of dangling bonds on the surface of Ge, which is potentially promising for modulation of the charge magnitude and sign in MIS devices based on Ge.