Open AccessДинамика изменения фотолюминесценции пористого кремния после гамма-облучения
Author(s) -
М.А. Елистратова,
Д.С. Полоскин,
Д.Н. Горячев,
И.Б. Захарова,
О.М. Сресели
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.08.46220.8807
Subject(s) - porous silicon , silicon , fourier transform infrared spectroscopy , nanoporous , materials science , photoluminescence , irradiation , fourier transform , infrared spectroscopy , analytical chemistry (journal) , chemical engineering , nanotechnology , chemistry , optoelectronics , physics , organic chemistry , quantum mechanics , nuclear physics , engineering
AbstractRadiation stability of the nanoporous silicon under gamma irradiation was investigated. Changes in the properties of porous silicon under gamma irradiation were registered by measurements of photoluminescence spectra and Fourier-transform infrared (FTIR) spectroscopy. Besides the appearance of point defects and their subsequent oxidation, the significant differences were shown to be in the behavior of the porous silicon properties in comparison with that of bulk silicon apparently due to the quantum size nature of nanoporous silicon.