Влияние изотропного давления на вольт-амперную характеристику поверхностно-барьерных диодов Sb-p-Si&lt;Mn&gt;-Au | Zendy

С. З. Зайнабидинов | Zendy; И.Г. Турсунов | Zendy; О. Химматкулов | Zendy

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Влияние изотропного давления на вольт-амперную характеристику поверхностно-барьерных диодов Sb-p-Si<Mn>-Au

Author(s) -

С. З. Зайнабидинов,

И.Г. Турсунов,

О. Химматкулов

Publication year - 2018

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2018.08.46215.8765

Subject(s) - hydrostatic pressure , diode , materials science , analytical chemistry (journal) , chemistry , current (fluid) , optoelectronics , physics , thermodynamics , chromatography

The influence of hydrostatic pressure on the current–voltage characteristics of surface-barrier diode structures of the Sb– p -Si〈Mn〉–Au type are investigated. The potential-barrier height and the baric coefficient of its variation are found to be e ϕ_δ = 0.75 eV and δ =–1.54 × 10^–11 eV/Pa, respectively.

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