Open AccessВлияние изотропного давления на вольт-амперную характеристику поверхностно-барьерных диодов Sb-p-Si<Mn>-Au
Author(s) -
С. З. Зайнабидинов,
И.Г. Турсунов,
О. Химматкулов
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.08.46215.8765
Subject(s) - hydrostatic pressure , diode , materials science , analytical chemistry (journal) , chemistry , current (fluid) , optoelectronics , physics , thermodynamics , chromatography
The influence of hydrostatic pressure on the current–voltage characteristics of surface-barrier diode structures of the Sb– p -Si〈Mn〉–Au type are investigated. The potential-barrier height and the baric coefficient of its variation are found to be e ϕ_δ = 0.75 eV and δ =–1.54 × 10^–11 eV/Pa, respectively.