Open AccessОсобенности электрохимического вольт-фарадного профилирования арсенид-галлиевых светоизлучающих и pHEMT-структур с квантово-размерными областями
Author(s) -
Г.Е. Яковлев,
М. В. Дорохин,
В. И. Зубков,
A. L. Dudin,
А.В. Здоровейщев,
Е. И. Малышева,
Ю.А. Данилов,
Б. Н. Звонков,
А. В. Кудрин
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.08.46212.8708
Subject(s) - quantum well , optoelectronics , heterojunction , high electron mobility transistor , materials science , capacitance , common emitter , quantum dot , doping , voltage , chemistry , optics , transistor , physics , electrode , laser , quantum mechanics
GaAs light-emitting (LED) and HEMT structures with δ-doped regions, InGaAs/GaAs quantum wells, and surface layers of InAs/GaAs quantum dots were studied by means of the electrochemical capacitance- voltage profiling technique. The concentration depth profiles of free charge carriers were obtained. Charges accumulated in quantum wells and quantum dots, as well as the doping levels of the emitter and δ layers were determined. The band structure and free carrier density distribution over the depth of the samples with different quantum well geometry were simulated. The specific features of electrochemical capacitance- voltage profiling in different heterostructure types are analyzed. A method of integration of capacitance- voltage curves at each etching stage was suggested. This method provides the efficient separation of responses from closely located layers, particularly the quantum well and δ layer.