Open AccessЭлектронные процессы в кристаллах CdIn-=SUB=-2-=/SUB=-Te-=SUB=-4-=/SUB=-
Author(s) -
О.Г. Грушка,
С.М. Чупыра,
С.В. Биличук,
О.А. Парфенюк
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.08.46207.8772
Subject(s) - photoconductivity , photoelectric effect , ionization , materials science , analytical chemistry (journal) , diffusion , ionization energy , spectral line , charge carrier , atomic physics , electron , semiconductor , electrical resistivity and conductivity , chemistry , optoelectronics , physics , ion , organic chemistry , chromatography , quantum mechanics , astronomy , thermodynamics
The results of investigations of electrical, optical, and photoelectric properties of CdIn_2Te^4 crystals, which were grown by the Bridgman method are presented. It is shown that electrical conductivity is determined mainly by electrons with the effective mass m _ n = 0.44 m _0 and the mobility 120–140 cm^2/(V s), which weakly depends on temperature. CdIn_2Te_4 behaves as a partially compensated semiconductor with the donor-center ionization energy E _ d = 0.38 eV and the compensation level K = N _ a / N _ d = 0.36. The absorption-coefficient spectra at the energy hν < E _ g = 1.27 eV are subject to the Urbach rule with a typical energy of 18–25 meV. The photoconductivity depends on the sample thickness. The diffusion length, the charge-carrier lifetime, and the surface-recombination rate are determined from the photoconductivity spectra.