Open AccessМногообразие свойств приборных структур на основе нитридов элементов III группы, связанное с модификацией фрактально-перколяционной системы
Author(s) -
В.В. Емцев,
Е.В. Гущина,
В.Н. Петров,
Н.А. Тальнишних,
А.Е. Черняков,
Е.И. Шабунина,
Н.М. Шмидт,
А. С. Усиков,
А.П. Карташова,
А.А. Зыбин,
В.В. Козловский,
М.Ф. Кудояров,
А.В. Сахаров,
Д.С. Полоскин,
В.В. Лундин,
Г.А. Оганесян
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.07.46056.8805
Subject(s) - high electron mobility transistor , materials science , optoelectronics , light emitting diode , percolation (cognitive psychology) , transistor , diode , nitride , gallium nitride , wavelength , nanotechnology , electrical engineering , layer (electronics) , voltage , neuroscience , biology , engineering
A fractal-percolation system that includes extended defects and random fluctuations in the alloy composition is formed during the growth of device structures based on Group-III nitrides. It is established that the specific features of this system are determined not only by the growth conditions. It is shown that the diversity of the electrical and optical properties of InGaN/GaN LEDs (light-emitting diodes) emitting at wavelengths of 450–460 and 519–530 nm, as well as that of the electrical properties of AlGaN/GaN HEMT (high-electron-mobility transistor) structures, is due to modification of the properties of the fractal-percolation system both during the growth process and under the action of the injection current and irradiation. The influence exerted by these specific features on the service life of light-emitting devices and on the reliability of AlGaN/GaN HEMT structures is discussed.