Open AccessИсследование глубоких энергетических уровней в солнечном элементе типа HIT
Author(s) -
С.П. Вихров,
Н.В. Вишняков,
В.В. Гудзев,
А.В. Ермачихин,
Д.В. Жилина,
В.Г. Литвинов,
А.Д. Маслов,
В.Г. Мишустин,
Е.И. Теруков,
А.С. Титов
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.07.46053.8666
Subject(s) - band diagram , capacitance , materials science , heterojunction , deep level transient spectroscopy , optoelectronics , analytical chemistry (journal) , voltage , solar cell , condensed matter physics , silicon , electrical engineering , chemistry , physics , engineering , electrode , chromatography
The results of studying a HIT (heterojunction with an intrinsic thin layer) Ag/ITO/ a -Si:H( p )/ a -Si:H( i )/ c -Si( n )/ a -Si:H( i )/ a -Si:H( n ^+)/ITO/Ag solar cell by the capacitance–voltage characteristic and current deep-level relaxation transient spectroscopy methods are presented. The temperature dependence of the capacitance–voltage characteristics of the HIT structure and deep-energy-level parameters are studied. The results of comprehensive studies by the above methods are used to determine the features of the energy-band diagram of actual HIT structures.