Open AccessИсследование механизмов токопрохождения в гетероструктуре CdS/por-Si/p-Si
Author(s) -
В. В. Трегулов,
V. G. Litvinov,
А. В. Ермачихин
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.07.46047.8648
Subject(s) - heterojunction , band diagram , quantum tunnelling , optoelectronics , materials science , semiconductor , space charge , depletion region , current (fluid) , voltage , condensed matter physics , electrical engineering , physics , electron , engineering , quantum mechanics
The temperature dependence of the forward and reverse portions of the current–voltage characteristic and the photovoltage spectrum of a CdS/ por -Si/ p -Si semiconductor heterostructure are studied. It is found that the current-flow mechanisms are controlled by generation–recombination processes in the spacecharge region of the por -Si/ p -Si heterojunction, carrier tunneling in the por -Si film, and the model of space-charge-limited currents. A simplified version of the energy-band diagram of the heterostructure under study is proposed.