Исследование механизмов токопрохождения в гетероструктуре CdS/por-Si/p-Si | Zendy

В. В. Трегулов | Zendy; V. G. Litvinov | Zendy; А. В. Ермачихин | Zendy

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Исследование механизмов токопрохождения в гетероструктуре CdS/por-Si/p-Si

Author(s) -

В. В. Трегулов,

V. G. Litvinov,

А. В. Ермачихин

Publication year - 2018

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2018.07.46047.8648

Subject(s) - heterojunction , band diagram , quantum tunnelling , optoelectronics , materials science , semiconductor , space charge , depletion region , current (fluid) , voltage , condensed matter physics , electrical engineering , physics , electron , engineering , quantum mechanics

The temperature dependence of the forward and reverse portions of the current–voltage characteristic and the photovoltage spectrum of a CdS/ por -Si/ p -Si semiconductor heterostructure are studied. It is found that the current-flow mechanisms are controlled by generation–recombination processes in the spacecharge region of the por -Si/ p -Si heterojunction, carrier tunneling in the por -Si film, and the model of space-charge-limited currents. A simplified version of the energy-band diagram of the heterostructure under study is proposed.

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