Open AccessФотопорог слоистого кристалла alpha-GeS: расчет из первых принципов
Author(s) -
З.А. Джахангирли,
Ф.М. Гашимзаде,
Д.А. Гусейнова,
Б.Г. Мехтиев,
Н.Б. Мустафаев
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.07.46037.8602
Subject(s) - crystal (programming language) , materials science , crystallography , crystal structure , chemistry , computer science , programming language
The photothreshold of an α-GeS layered crystal is calculated from first principles based on the functional density method depending on its thickness. Two neighboring crystal plates consisting of several layers are separated by vacuum 4 layers thick, which corresponds to the doublet unit cell size of a bulk crystal. It is shown that the magnitude of the photothreshold is almost invariable with a crystal thickness larger than 10 layers.