Фотопорог слоистого кристалла alpha-GeS: расчет из первых принципов | Zendy

З.А. Джахангирли | Zendy; Ф.М. Гашимзаде | Zendy; Д.А. Гусейнова | Zendy; Б.Г. Мехтиев | Zendy; Н.Б. Мустафаев | Zendy

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Фотопорог слоистого кристалла alpha-GeS: расчет из первых принципов

Author(s) -

З.А. Джахангирли,

Ф.М. Гашимзаде,

Д.А. Гусейнова,

Б.Г. Мехтиев,

Н.Б. Мустафаев

Publication year - 2018

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2018.07.46037.8602

Subject(s) - crystal (programming language) , materials science , crystallography , crystal structure , chemistry , computer science , programming language

The photothreshold of an α-GeS layered crystal is calculated from first principles based on the functional density method depending on its thickness. Two neighboring crystal plates consisting of several layers are separated by vacuum 4 layers thick, which corresponds to the doublet unit cell size of a bulk crystal. It is shown that the magnitude of the photothreshold is almost invariable with a crystal thickness larger than 10 layers.

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