Open AccessВлияние степени нитридизации сапфира и обогащения алюминием зародышевого слоя на структурные свойства слоев AlN
Author(s) -
Т.В. Малин,
Д.С. Милахин,
В.Г. Мансуров,
Ю.Г. Галицын,
А.С. Кожухов,
В.В. Ратников,
А.Н. Смирнов,
В.Ю. Давыдов,
К.С. Журавлeв
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.06.45930.8600
Subject(s) - sapphire , nitriding , materials science , monolayer , aluminium , molecular beam epitaxy , layer (electronics) , crystal (programming language) , atomic force microscopy , epitaxy , optoelectronics , flux (metallurgy) , ammonia , nanotechnology , metallurgy , optics , chemistry , laser , programming language , physics , organic chemistry , computer science
The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.