Open AccessМодель накопления зарядов в n- и p-МОП-транзисторах при туннельной инжекции электронов из затвора
Author(s) -
О.В. Александров,
С.А. Мокрушина
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.06.45929.8717
Subject(s) - quantum tunnelling , dielectric , materials science , threshold voltage , hydrogen , semiconductor , electron , charge (physics) , atomic physics , oxide , condensed matter physics , transistor , constant voltage , metal , high κ dielectric , voltage , optoelectronics , physics , quantum mechanics , metallurgy
A quantitative model for charge accumulation in an undergate dielectric during tunneling electron injection from a gate according to the Fowler–Nordheim mechanism is developed. The model takes into account electron and hole capture at hydrogen-free and hydrogen-related traps as well as the generation of surface states during the interaction of holes with hydrogen-related centers. The experimental dependences of the threshold voltage shift and gate voltage shift of n - and p -channel MOS (metal–oxide–semiconductor) transistors on the injected charge in the constant current mode are analyzed based on the model.