Open AccessТуннельный ток во встречных диодах Шоттки, образованных контактами между вырожденным GaN n-типа и металлом
Author(s) -
И.О. Майборода,
Ю.В. Грищенко,
И.С. Езубченко,
И.С. Соколов,
И.А. Черных,
А.А. Андреев,
М.Л. Занавескин
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.06.45928.8568
Subject(s) - materials science , electrical resistivity and conductivity , condensed matter physics , schottky diode , schottky barrier , quantum tunnelling , diode , degenerate energy levels , conductivity , ohmic contact , metal , current density , electron , optoelectronics , chemistry , nanotechnology , electrical engineering , physics , metallurgy , layer (electronics) , quantum mechanics , engineering
The nonlinear behavior of the I – V characteristics of symmetric contacts between a metal and degenerate n -GaN, which form oppositely connected Schottky diodes, is investigated at free-carrier densities from 1.5 × 10^19 to 2.0 × 10^20 cm^–3 in GaN. It is demonstrated that, at an electron density of 2.0 × 10^20 cm^–3, the conductivity between metal (chromium) and GaN is implemented via electron tunneling and the resistivity of the Cr–GaN contact is 0.05 Ω mm. A method for determining the parameters of potential barriers from the I – V characteristics of symmetric opposite contacts is developed. The effect of pronounced nonuniformity of the current density and voltage distributions over the contact area at low contact resistivity is taken into account. The potential-barrier height for Cr– n ^+-GaN contacts is found to be 0.47 ± 0.04 eV.