Open AccessВысокочувствительный фотодетектор на основе атомарно-тонкого MoS-=SUB=-2-=/SUB=-
Author(s) -
S. D. Lavrov,
Anastasiya Shestakova,
Е. Д. Мишина,
Ю.Р. Ефименков,
А.С. Сигов
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.06.45927.8668
Subject(s) - photosensitivity , materials science , fabrication , photodetector , optoelectronics , characterization (materials science) , sensitivity (control systems) , nanotechnology , electronic engineering , engineering , medicine , alternative medicine , pathology
A design for a high-sensitivity photodetector with a single layer of MoS_2 transition-metal dichalcogenide used as the basic functional element is proposed and the process of its fabrication is presented step by step. Quality evaluation and the selection of functional MoS_2 flakes is based on the results of combined optical characterization. The main operating characteristics of the fabricated device are investigated and a photosensitivity of 1.4 mA/W is demonstrated. A difference of this device in comparison with existing analogues is its high photosensitivity at low operating voltages (in the range of ±3 V).