Open AccessЭлектрофизические свойства нелегированных и легированных мышьяком эпитаксиальных слоев Hg-=SUB=-1-x-=/SUB=-Cd-=SUB=-x-=/SUB=-Te p-типа проводимости с x~0.4, выращенных методом MOCVD
Author(s) -
В. С. Евстигнеев,
В. С. Варавин,
А. В. Чилясов,
V. G. Remesnik,
А. Н. Моисеев,
Б.С. Степанов
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.06.45914.8696
Subject(s) - metalorganic vapour phase epitaxy , arsenic , doping , acceptor , annealing (glass) , analytical chemistry (journal) , epitaxy , chemical vapor deposition , auger , charge carrier , materials science , chemistry , atomic physics , optoelectronics , condensed matter physics , nanotechnology , physics , layer (electronics) , chromatography , metallurgy , composite material
The temperature dependences of the charge-carrier concentration and lifetime of minority carriers in undoped and arsenic-doped p -type Hg_1 – x Cd_ x Te epitaxial layers with x ≈ 0.4 grown by the MOCVD-IMP (metalorganic chemical vapor deposition–interdiffusion multilayer process) method are studied. It is shown that the temperature dependences of the charge-carrier concentration can be described by a model assuming the presence of one acceptor and one donor level. The ionization energies of acceptors in the undoped and arsenic-doped materials are 14 and 3.6 meV, respectively. It is established that the dominant recombination mechanism in the undoped layers is Shockley–Read–Hall recombination, and after low-temperature equilibrium annealing in mercury vapors (230°C, 24 h), the dominant mechanism is radiative recombination. The fundamental limitation of the lifetime in the arsenic-doped material is caused by the Auger-7 process. Activation annealing (360°C, 2 h) of the doped layers makes it possible to attain the 100% activation of arsenic.