Open AccessResistance switching in Ag, Au and Cu films at the percolation threshold
Author(s) -
I. A. Gladskikh,
M. G. Gushchin,
T. A. Vartanyan
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.05.45871.60
Subject(s) - percolation threshold , copper , annealing (glass) , materials science , percolation (cognitive psychology) , electrical resistivity and conductivity , metal , conductivity , thin film , electrical conductor , condensed matter physics , composite material , nanotechnology , metallurgy , chemistry , electrical engineering , physics , neuroscience , biology , engineering
A straightforward method for thin metal films production and bringing them at the percolation threshold has been developed. The method is based on the controlled thermal annealing of initially conductive metal films. Electrical conductivity studies of thin silver, gold, and copper films at the percolation threshold revealed the existence of high-resistance states (10^12 Ω) and low-resistance states (10^3 Ω) of the films. The switching between these states under bias is reversible. The characteristic switching times are 200 ns, 2 μs, and 60 μs for silver, gold, and copper films, correspondently.