Open AccessKinetics of structural changes on GaSb(001) singular and vicinal surfaces during the UHV annealing
Author(s) -
A. V. Vasev,
М. А. Putyato,
V.V. Preobrazhenskii,
А. К. Бакаров,
A. I. Toropov
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.05.45869.58
Subject(s) - vicinal , desorption , annealing (glass) , antimony , reflection high energy electron diffraction , kinetics , materials science , condensed matter physics , chemistry , crystallography , adsorption , nanotechnology , physics , epitaxy , metallurgy , quantum mechanics , organic chemistry , layer (electronics)
The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined during antimony evaporation in Langmuir desorption mode. It is shown that the structural transition (2 × 5) → (1 × 3) is a complex of two transitions— order → disorder and disorder → order. The influence of the degree of surface miscut from the singular face on the dimension of the transition (2 × 5) → DO was studied. The activation energies of structural transitions ex (2 × 5) → (2 × 5), (2 × 5) → DO and DO → (1 × 3) on singular and vicinal faces GaSb(001) were determined.