Open AccessMBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates
Author(s) -
R. R. Reznik,
K. P. Kotlyar,
І. П. Сошніков,
С. А. Кукушкин,
А. В. Осипов,
G. É. Cirlin
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.05.45866.55
Subject(s) - nanowire , materials science , substrate (aquarium) , silicon carbide , silicon , layer (electronics) , mole fraction , nanometre , molecular beam epitaxy , optoelectronics , nanotechnology , epitaxy , composite material , chemistry , oceanography , geology
The possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate—the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied.