Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands | Zendy

E. A. Evropeytsev | Zendy; А. Н. Семенов | Zendy; Д. В. Нечаев | Zendy; V. N. Jmerik | Zendy; V. Kh. Kaĭbyshev | Zendy; S. I. Troshkov | Zendy; P. N. Brunkov | Zendy; A. A. Usikova | Zendy; С. В. Иванов | Zendy; А. А. Торопов | Zendy

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Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands

Author(s) -

E. A. Evropeytsev,

А. Н. Семенов,

Д. В. Нечаев,

V. N. Jmerik,

V. Kh. Kaĭbyshev,

S. I. Troshkov,

P. N. Brunkov,

A. A. Usikova,

С. В. Иванов,

А. А. Торопов

Publication year - 2018

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2018.05.45859.48

Subject(s) - photoluminescence , materials science , optoelectronics , substrate (aquarium) , sapphire , ultraviolet , semiconductor , quantum dot , fabrication , nanotechnology , optics , laser , physics , oceanography , geology , medicine , alternative medicine , pathology

We report on fabrication and studies of composite heterostuctures consisting of an Al_0.55Ga_0.45N/A_l0.8Ga_0.2N quantum well and surface Al nanoislands, grown by plasma-assisted molecularbeam epitaxy on c-sapphire substrates. The influence of a substrate temperature varied between 320 and 700ºC on the size and density of the deposited Al nanoislands is evaluated. The effect of Al nanoislands on decay kinetics of the quantum well middle-ultraviolet photoluminescence has been investigated by time resolved photoluminescence. The samples with the maximum density of Al nanoislands of 10^8 cm^–2 and lateral dimensions in the range of 100–500 nm demonstrated shortening of the photoluminescence lifetime, induced by interaction of the emitting quantum well and the plasmonic metal particles.

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