Open AccessOptical properties of GaN nanowires grown by MBE on SiC/Si(111) hybrid substrate
Author(s) -
I. V. Shtrom,
N. G. Filosofov,
В.Ф. Агекян,
М. Б. Смирнов,
A. Yu. Serov,
R. R. Reznik,
K. E. Kudryavtsev,
G. É. Cirlin
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.05.45853.42
Subject(s) - materials science , silicon carbide , substrate (aquarium) , nanowire , silicon , layer (electronics) , optoelectronics , doping , nanotechnology , molecular beam epitaxy , buffer (optical fiber) , epitaxy , composite material , computer science , telecommunications , oceanography , geology
The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.