Open AccessBiexciton binding energy in spherical quantum dots with Gamma-=SUB=-8-=/SUB=- valence band
Author(s) -
A. A. Golovatenko,
M. A. Semina,
A. V. Rodina,
Т. В. Шубина
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.05.45840.29
Subject(s) - biexciton , binding energy , quantum dot , physics , valence band , valence (chemistry) , perturbation theory (quantum mechanics) , atomic physics , limiting , exciton , band gap , condensed matter physics , quantum mechanics , mechanical engineering , engineering
The biexciton binding energy in spherical CdSe/ZnSe quantum dots is calculated variationally in the framework of kp-perturbation theory. Smooth and abrupt confining potentials with the same localization area of carriers are compared for two limiting cases of light hole to heavy hole mass ratio β = m_ lh /m_ hh : β = 1 and β = 0. Accounting for correlations between carriers results in their polarized configuration and significantly increases the biexciton binding energy in comparison with the first order perturbation theory. For β = 0 in smooth confining potentials there are three nearby biexciton states separated by small energy gap between 1 S _3/2 and 1 P _3/2 hole states.