Red single-photon emission from InAs/AlGaAs quantum dots | Zendy

M. V. Rakhlin | Zendy; K. G. Belyaev | Zendy; G. V. Klimko | Zendy; Ivan S. Mukhin | Zendy; С. В. Иванов | Zendy; А. А. Торопов | Zendy

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Red single-photon emission from InAs/AlGaAs quantum dots

Author(s) -

M. V. Rakhlin,

K. G. Belyaev,

G. V. Klimko,

Ivan S. Mukhin,

С. В. Иванов,

А. А. Торопов

Publication year - 2018

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2018.04.45829.18

Subject(s) - quantum dot , photoluminescence , molecular beam epitaxy , optoelectronics , spectroscopy , materials science , luminescence , photon , wavelength , emission spectrum , single photon source , physics , epitaxy , optics , spectral line , nanotechnology , layer (electronics) , quantum mechanics , astronomy

We report on single-photon emission of InAs/AlGaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. By varying the growth conditions the QDs luminescence could be tuned over a wide wavelength range from 0.64 to 1 μm, including red part of the visible spectrum. Emission properties of individual QDs are investigated by micro-photoluminescence (μ-PL) spectroscopy using 500-nm-size etched mesa structures. Autocorrelation functions of photons from single QDs, measured in the wide spectral range demonstrate antibunching effect at zero delay time with a value of g ^(2)(0) ~ 0.17 that is a clear evidence of non-classical light.

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