Open AccessRed single-photon emission from InAs/AlGaAs quantum dots
Author(s) -
M. V. Rakhlin,
K. G. Belyaev,
G. V. Klimko,
I. S. Mukhin,
С. В. Иванов,
A. A. Toropov
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.04.45829.18
Subject(s) - quantum dot , photoluminescence , molecular beam epitaxy , optoelectronics , spectroscopy , materials science , luminescence , photon , wavelength , emission spectrum , single photon source , physics , epitaxy , optics , spectral line , nanotechnology , layer (electronics) , quantum mechanics , astronomy
We report on single-photon emission of InAs/AlGaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. By varying the growth conditions the QDs luminescence could be tuned over a wide wavelength range from 0.64 to 1 μm, including red part of the visible spectrum. Emission properties of individual QDs are investigated by micro-photoluminescence (μ-PL) spectroscopy using 500-nm-size etched mesa structures. Autocorrelation functions of photons from single QDs, measured in the wide spectral range demonstrate antibunching effect at zero delay time with a value of g ^(2)(0) ~ 0.17 that is a clear evidence of non-classical light.