Open AccessDensity control of InP/GaInP quantum dots grown by metal-organic vapor-phase epitaxy
Author(s) -
D. V. Lebedev,
N. A. Kalyuzhnyy,
S. A. Mintairov,
K. G. Belyaev,
M. V. Rakhlin,
A. A. Toropov,
P. N. Brunkov,
A. S. Vlasov,
J. L. Merz,
Sergey Rouvimov,
S. Oktyabrsky,
M. Yu. Yakimov,
Ivan Mukhin,
A.V. Shelaev,
V.A. Bykov,
A. Yu. Romanova,
P. A. Buryak,
A. M. Mintairov
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.04.45826.15
Subject(s) - quantum dot , photoluminescence , monolayer , materials science , chemical vapor deposition , transmission electron microscopy , epitaxy , spectroscopy , analytical chemistry (journal) , metalorganic vapour phase epitaxy , deposition (geology) , metal , optoelectronics , nanotechnology , chemistry , layer (electronics) , paleontology , physics , quantum mechanics , chromatography , sediment , metallurgy , biology
We investigated structural and emission properties of self-organized InP/GaInP quantum dots (QD) grown by metal organic chemical vapor deposition using an amount of deposited In from 7 to 2 monolayers (ML). In the uncapped samples, using atomic force microscopy (AFM), we observed lateral sizes of 100–200 nm, together with a bimodal height distribution having maxima at ∼5 and ∼15 nm, which we denoted as QDs of type A and B, respectively; and reduction of the density of the type-B dots from 4.4 to 1.6 μm^–2. The reduction of the density of B-type dots were observed also using transmission electron microscopy of the capped samples. Using single dot low-temperature photoluminescence (PL) spectroscopy we demonstrated effects of Wigner localization for the electrons accumulated in these dots.