Open AccessCore-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential
Author(s) -
А. М. Можаров,
A. A. Vasiliev,
A D Bolshakov,
G. A. Sapunov,
Vladimir V. Fedorov,
G. É. Cirlin,
I. S. Mukhin
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.04.45824.13
Subject(s) - nanowire , heterojunction , materials science , shell (structure) , differential (mechanical device) , nitride , work (physics) , optoelectronics , nanotechnology , physics , composite material , layer (electronics) , quantum mechanics , thermodynamics
In this work we have studied volt-ampere characteristics of single core-shell GaN/InGaN/GaN nanowire. It was experimentally shown that negative differential resistance effect can be obtained in the studied heterostructure. On the base of numerical calculation results the model describing negative differential resistance phenomenon was proposed. We assume this effect to be related with strong localization of current flow inside the nanowire and emergence of Gunn effect in this area.