Open AccessMagnetooptical studies and stimulated emission in narrow gap HgTe/CdHgTe structures in the very long wavelength infrared range
Author(s) -
V. V. Rumyantsev,
L. S. Bovkun,
А. М. Кадыков,
М. А. Фадеев,
А. А. Дубинов,
V. Ya. Aleshkin,
Н. Н. Михайлов,
S. A. Dvoretsky,
B. A. Piot,
М. Орлита,
М. Потемски,
Ф. Теппе,
С. В. Морозов,
В. И. Гавриленко
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.04.45813.02
Subject(s) - auger effect , optoelectronics , auger , wavelength , quantum well , materials science , infrared , band gap , spontaneous emission , laser , carrier lifetime , optics , atomic physics , physics , silicon
We investigate the prospects of HgTe/HgCdTe quantum wells for long-wavelength interband lasers (λ = 15–30 μm). The properties of stimulated emission (SE) and magnetoabsorbtion data of QWs structures with wide-gap HgCdTe dielectric waveguide provide an insight on dominating non-radiative carrier recombination mechanism. It is shown that the carrier heating under intense optical pumping is the main factor limiting the SE wavelength and intensity, since the Auger recombination is greatly enhanced when carriers populate high energy states in the valence band.