Open AccessФормирование ступенчатой поверхности Si(100) и ее влияние на рост островков Ge
Author(s) -
М.Ю. Есин,
А.И. Никифоров,
В.А. Тимофеев,
А.Р. Туктамышев,
В.И. Машанов,
И.Д. Лошкарев,
А.С. Дерябин,
О.П. Пчеляков
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.03.45630.8624
Subject(s) - monatomic gas , annealing (glass) , superstructure , condensed matter physics , nucleation , electron diffraction , materials science , silicon , crystallography , diffraction , growth rate , chemistry , optics , thermodynamics , physics , geometry , metallurgy , mathematics , organic chemistry
The transition from a two-domain to one-domain surface on a Si(100) substrate is investigated. It is demonstrated using reflection high-energy electron diffraction that at a temperature of 600°C and a deposition rate of 0.652 Å/s onto a Si(100) substrate pre-heated to 1000°C and inclined at an angle of 0.35°C to the plane, a series of reflections from the 1 × 2 superstructure completely vanishes at a constant flow of Si. This is attributed to the transition of the surface from monoatomic to diatomic steps. At growth rates lower than 0.652 Å/s, the transition from a two-domain to one-domain surface is also observed; with a decrease in the growth rate, the intensity ratio I _2 × 1/ I _1 × 2 decreases and the maximum of the dependences shifts toward lower temperatures. The complete vanishing of the series of superstructural reflections after preliminary annealing at a temperature of 700°C is not observed; this series only vanishes after annealing at 900 and 1000°C. The growth of Ge islands on a Si(100) surface preliminary annealed at a temperature of 800°C is studied. It is shown that the islands tend to nucleate at the step edges. A mechanism of Ge island ordering on the Si(100) surface is proposed.