Open AccessФотолюминесцентные исследования легированных кремнием эпитаксиальных пленок GaAs, выращенных на подложках GaAs с ориентациями (100) и (111)А при пониженных температурах
Author(s) -
Г. Б. Галиев,
Е. А. Климов,
А. Н. Клочков,
С. С. Пушкарев,
P. P. Maltsev
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.03.45628.8589
Subject(s) - photoluminescence , materials science , impurity , atmospheric temperature range , conductivity , analytical chemistry (journal) , electrical resistivity and conductivity , doping , spectral line , optoelectronics , chemistry , physics , organic chemistry , chromatography , quantum mechanics , astronomy , meteorology
The electrical properties and photoluminescence features of uniformly Si-doped GaAs layers grown on GaAs substrates with the (100) and (111)A crystallographic orientations of the surface are studied. The samples are grown at the same As_4 pressure in the growth temperature range from 350 to 510°C. The samples grown on GaAs(100) substrates possess n -type conductivity in the entire growth temperature range, and the samples grown on GaAs(111)A substrates possess p -type conductivity in the growth temperature range from 430 to 510°C. The photoluminescence spectra of the samples exhibit an edge band and an impurity band. The edge photoluminescence band corresponds to the photoluminescence of degenerate GaAs with n - and p -type conductivity. The impurity photoluminescence band for samples on GaAs(100) substrates in the range 1.30–1.45 eV is attributed to V _As defects and Si_As– V _As defect complexes, whose concentration varies with sample growth temperature. Transformation of the impurity photoluminescence spectra of the samples on GaAs(111)A substrates is interpreted as being a result of changes in the V _As and V _Ga defect concentrations under variations in the growth temperature of the samples.