Open AccessМеханизм и закономерность снижения светового потока светодиодов на основе структур AlGaN/InGaN/GaN с квантовыми ямами при длительном протекании прямого тока различной плотности
Author(s) -
Ф.И. Маняхин
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.03.45625.8341
Subject(s) - light emitting diode , heterojunction , materials science , indium , semiconductor , optoelectronics , quantum well , diode , indium gallium nitride , condensed matter physics , flux (metallurgy) , lattice (music) , wide bandgap semiconductor , gallium nitride , physics , optics , nanotechnology , laser , layer (electronics) , acoustics , metallurgy
The mechanism of the light-flux decrease in light-emitting diodes based on AlGaN/InGaN/GaN heterostructures with quantum holes is determined. The light-flux decrease is associated with point-defect generation in the heterostructure active region due to interaction of the semiconductor lattice with hot carriers formed in the mode of deviation of the current–voltage characteristic from the exponential one. An analytical expression for the light-flux decrease upon prolonged current flow, which is confirmed by experimental results, is derived. It is shown that the behavior of the dependence of the light flux on the lifetime is strongly affected by the nonuniform distribution of indium in quantum wells.