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Оптимальное легирование диодных прерывателей тока
Author(s) -
А.С. Кюрегян
Publication year - 2018
Publication title -
физика и техника полупроводников
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.03.45622.8550
Subject(s) - dopant , materials science , doping , blocking (statistics) , electrical resistivity and conductivity , diode , optoelectronics , engineering physics , analytical chemistry (journal) , electrical engineering , chemistry , mathematics , physics , engineering , statistics , chromatography
An analytical solution to the problem of a decrease in energy losses Ω in diode current interrupters is derived for the stage of recovery of the blocking ability due to optimization of the dopant distribution N ( x ) over the structure thickness. The distribution N ( x ) close to optimal is found; it makes it possible to decrease Ω by 30–55% compared with standard design interrupters with homogeneously doped high-resistivity layers.

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