Open AccessМеханизм генерирования донорно-акцепторных пар при сильном легировании n-ZrNiSn акцепторной примесью Ga
Author(s) -
В.А. Ромака,
P.-F. Rogl,
D. Frushart,
D. Kaczorowski
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.03.45614.8573
Subject(s) - acceptor , impurity , intermetallic , doping , semiconductor , fermi level , condensed matter physics , atom (system on chip) , materials science , crystal structure , electron , lattice (music) , atomic physics , crystallography , chemistry , physics , metallurgy , alloy , nuclear physics , computer science , optoelectronics , organic chemistry , acoustics , embedded system
The nature of the mechanism of the simultaneous generation of donor–acceptor pairs under heavy doping of n -ZrNiSn intermetallic semiconductor with the Ga acceptor impurity is established. Such spatial arrangement in the crystal lattice of ZrNiSn_1– x Ga_ x is found when the rate of movement of the Fermi level εF found from calculations of the density distribution of electron states coincides with that experimentally established from dependences lnρ(1/ T ). It is shown that when the Ga impurity atom (4 s ^24 p ^1) occupies the 4 b sites of Sn atoms (5 s ^25 p ^2), structural defects of both acceptor nature and donor nature in the form of vacancies in the 4 b site are simultaneously generated. The results are discussed in the scope of the Shklovskii–Efros model of a heavily doped and compensated semiconductor.