Open AccessЛюминесцентные свойства тонких пленок Cd-=SUB=-x-=/SUB=-Zn-=SUB=-1-x-=/SUB=-O
Author(s) -
А. А. Лотин,
О. А. Новодворский,
Л. С. Паршина,
О. Д. Храмова,
Е. А. Черебыло,
В. А. Михалевский
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.02.45455.8638
Subject(s) - photoluminescence , wurtzite crystal structure , exciton , analytical chemistry (journal) , spectral line , pulsed laser deposition , materials science , thin film , atmospheric temperature range , zinc , crystallography , chemistry , condensed matter physics , nanotechnology , physics , optoelectronics , chromatography , astronomy , meteorology , metallurgy
Thin Cd_ x Zn_1 – x O films with a Cd content in the range from zero to 35 at % are synthesized by pulsed laser deposition. A record-breaking solubility limit of 30 at % of Cd in wurtzite-structured Cd_ x Zn_1 – x O thin films is attained. Apart from the exciton peak, additional peaks associated with an inhomogeneous distribution of Cd in the samples are observed in the low-temperature (10 K) photoluminescence spectra of Cd_0.15Zn_0.85O and Cd_0.3Zn_0.7O films. An unsteady ( S -like) temperature dependence of the spectral position of the exciton photoluminescence peak in Cd_ x Zn_1 – x O films is observed. Such a dependence is associated with the effect of the localization of charge carriers.