Open AccessЭлектрическая активность протяженных дефектов в мультикремнии
Author(s) -
С.М. Пещерова,
Е.Б. Якимов,
А.И. Непомнящих,
Л.А. Павлова,
О.В. Феклисова,
Р.В. Пресняков
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.02.45454.8546
Subject(s) - grain boundary , electron microprobe , materials science , silicon , microanalysis , scanning electron microscope , impurity , etching (microfabrication) , metallurgy , dislocation , analytical chemistry (journal) , electron probe microanalysis , crystallography , microstructure , composite material , chemistry , organic chemistry , layer (electronics) , chromatography
The excess carrier lifetime (τ) distribution in multicrystalline silicon grown by the Bridgman technique from high-purity metallurgical silicon (HPMG-Si) is studied. The features of the variation in τ, caused by the grain-boundary structure of ingots, are revealed. The grain boundaries, dislocations, and impurity microinclusions are studied by electron probe microanalysis (EPMA) and scanning electron microscopy (SEM) using selective acid etching. The electrical activity of extended defects is measured by the electronbeam- induced-current (EBIC) method.