Open AccessДиоды Шоттки графит/p-SiC, полученные методом переноса нарисованной пленки графита на SiC
Author(s) -
М.Н. Солован,
G. O. Andrushchak,
А.И. Мостовой,
T. T. Kovalyuk,
В. В. Брус,
П. Д. Марьянчук
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.02.45451.8603
Subject(s) - materials science , schottky diode , optoelectronics , diode , quantum tunnelling , graphite , diffusion capacitance , charge carrier , capacitance , equivalent series resistance , reverse leakage current , voltage , analytical chemistry (journal) , electrical engineering , chemistry , electrode , chromatography , composite material , engineering
Graphite/ p -SiC Schottky diodes are fabricated using the recently suggested technique of transferring drawn graphite films onto p -SiC single-crystal substrates. The current–voltage and capacitance–voltage characteristics are measured at different temperatures and at different frequencies of a small-signal AC signal, respectively. The temperature dependences of the potential-barrier height and of the series resistance of the graphite/ p -SiC junctions are measured and analyzed. The dominant mechanisms of the charge–carrier transport through the diodes are determined. It is shown that the dominant mechanisms of the transport of charge carriers through the graphite/ p -Si Schottky diodes at a forward bias are multi-step tunneling recombination and tunneling described by the Newman formula (at high bias voltages). At reverse biases, the dominant mechanisms of charge transport are the Frenkel–Poole emission and tunneling. It is shown that the graphite/ p -SiC Schottky diodes can be used as detectors of ultraviolet radiation since they have the open-circuit voltage V _oc = 1.84 V and the short-circuit current density I _sc = 2.9 mA/cm^2 under illumination from a DRL 250-3 mercury–quartz lamp located 3 cm from the sample.