Open AccessВнутризонное поглощение излучения дырками в квантовых ямах InAsSb/AlSb и InGaAsP/InP
Author(s) -
Nikolay Pavlov,
Г.Г. Зегря,
А.Г. Зегря,
V. E. Bugrov
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.02.45445.8645
Subject(s) - quantum well , absorption (acoustics) , condensed matter physics , radiation , context (archaeology) , materials science , semiconductor , crystal (programming language) , optoelectronics , laser , optics , physics , paleontology , computer science , biology , programming language
Microscopic analysis of intraband radiation absorption by holes with their transition to the spin-split band for InAsSb/AlSb and InGaAsP/InP semiconductor quantum wells is performed in the context of the four-band Kane model. The calculation is performed for two incident-radiation polarizations: along the crystal-growth axis and in the quantum-well plane. It is demonstrated that absorption with transition to the discrete spectrum of spin-split holes has a higher intensity than absorption with transitions to the continuous spectrum. The dependences of the intraband absorption coefficient on temperature, hole density, and quantum- well width are thoroughly analyzed. It is shown that intraband radiation absorption can be the main mechanism of internal radiation losses in lasers based on quantum wells.