Open AccessЭлектронный транспорт в квантовых ямах AlGaAs/InGaAs/ GaAs РНЕМТ при различных температурах: влияние одностороннего дельта-легирования Si
Author(s) -
D. A. Safonov,
А. Н. Виниченко,
Н. Каргин,
И. С. Васильевский
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.02.45444.8621
Subject(s) - doping , impurity , electron , condensed matter physics , materials science , fermi level , ionization , conduction band , electron transport chain , electron mobility , shubnikov–de haas effect , fermi gas , drop (telecommunication) , quantum well , analytical chemistry (journal) , chemistry , physics , quantum oscillations , optics , ion , telecommunications , laser , biochemistry , organic chemistry , chromatography , quantum mechanics , computer science
The influence of the concentration of δ doping with Si on the electron transport properties of Al_0.25Ga_0.75As/In_0.2Ga_0.8As/GaAs pseudomorphic quantum wells is studied in a broad temperature range of 4.2–300 K. A decrease in the doping efficiency at an electron concentration of >1.8 × 10^12 cm^–2 is found. This is caused by the effects of incomplete impurity ionization, which is also reflected on the temperature dependence of the electron concentration. A nonmonotonic variation in the electron mobility with increasing donor concentration, which is not associated with filling of the upper subband of size quantization, is observed. An increase in the mobility is associated with a rise in the Fermi momentum and screening, while its subsequent drop with increasing Si concentration is caused by the tunnel degradation of the spacer layer with a decrease in the conduction-band potential in the region of the δ-Si layer.