Open AccessЭлектрически активные состояния захвата и переноса заряда, обусловливающие медленную рекомбинацию в кристаллах бромида таллия при низких температурах
Author(s) -
В. Кажукаускас,
Р. Гарбачаускас,
С. Савицки
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.02.45439.8672
Subject(s) - photoconductivity , quenching (fluorescence) , materials science , excitation , activation energy , thermal conductivity , electric field , conductivity , electrical resistivity and conductivity , atomic physics , thermal , condensed matter physics , chemistry , thermodynamics , optoelectronics , optics , physics , fluorescence , composite material , quantum mechanics
TlBr single crystals grown by the Bridgman–Stockbarger method are studied. It is established that frozen-conductivity effects manifest themselves under interband excitation by light at temperatures below 200 K. Herewith, clearly pronounced superlinear dependences of the induced photoconductivity on the strength of the applied electric field manifest themselves. The results of studying thermally stimulated conductivity evidence that these phenomena can be associated with the filling of trap states with thermal activation energies of 0.08–0.12 eV. This state can be removed due to thermal quenching at temperatures of ≳180 K because of the emptying of energy states with an activation energy of 0.63–0.65 eV filled after optical generation.