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Диэлектрические свойства и электропроводность легированного серебром монокристалла TlGaS-=SUB=-2-=/SUB=-
Author(s) -
С.Н. Мустафаева,
С.М. Асадов,
Э.М. Керимова
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.02.45438.8517
Subject(s) - dielectric , condensed matter physics , doping , conductivity , fermi level , materials science , electrical resistivity and conductivity , density of states , dispersion (optics) , ion , charge (physics) , dielectric dispersion , chemistry , physics , permittivity , optics , optoelectronics , electron , organic chemistry , quantum mechanics
The effect of silver ions (2 mol %) on the dielectric properties and electrical conductivity of TlGaS_2 single crystals grown by the Bridgman–Stockbarger method is investigated. The experimental results of studying the frequency dispersion of the dielectric coefficients of TlGaS_2 single crystals (2 mol % Ag) makes it possible to establish the nature of dielectric losses and the charge-transfer mechanism, to evaluate the density of states near the Fermi level, the spread of states, the average hopping time and length, and the concentration of deep traps responsible for ac conductivity. The Ag doping of the TlGaS_2 single crystals results in an increase in the density of states near the Fermi level and in a decrease in the average hopping time and length.

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