Open AccessВлияние разориентации подложки на состав, структурные и фотолюминесцентные свойства эпитаксиальных слоев, выращенных на GaAs(100)
Author(s) -
П. В. Середин,
A. S. Lenshin,
А.В. Федюкин,
И. Н. Арсентьев,
А.В. Жаботинский,
D. N. Nikolaev,
H. Leiste,
Monika Rinke
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.01.45329.8565
Subject(s) - photoluminescence , misorientation , materials science , substrate (aquarium) , epitaxy , chemical vapor deposition , layer (electronics) , optoelectronics , deposition (geology) , metalorganic vapour phase epitaxy , oxide , crystallography , nanotechnology , chemistry , composite material , metallurgy , microstructure , paleontology , oceanography , sediment , grain boundary , biology , geology
AbstractThe influence of the degree of misorientation and treatment of a GaAs substrate on the structural and optical characteristics of homoepitaxial GaAs/GaAs(100) structures grown by metal–organic chemicalvapor deposition is studied. From the data obtained by a series of structural and spectroscopic techniques, it is shown that the degree of deviation of the substrate from the exact orientation towards the [110] direction by an angle of up to 4° brings about stepwise growth of the GaAs film in the initial stage and a further increase in the degree of misorienration towards the [110] direction to 10° results in an increase in the number of structural defects in the epitaxial film. At the same time, the samples of homoepitaxial structures grown by metal–organic chemical-vapor deposition on GaAs(100) substrates misoriented by 4° towards the [110] direction possess the highest photoluminescence efficiency; it is ~15% higher than the corresponding quantity for structures grown on precisely oriented GaAs(100) substrates. Preliminary polishing of the GaAs substrate (removal of an oxide layer) also yields the intensification of photoluminescence emission compared to emission in the case of an unpolished substrate of the same type. For samples grown on substrates misoriented by 4°, such an increase in the photoluminescence efficiency is ~30%.