Open AccessО пространственной локализации свободных электронов в n-канальных МОП-транзисторах на основе 4H-SiC
Author(s) -
П. А. Иванов
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.01.45327.8436
Subject(s) - transistor , mosfet , materials science , electron , inversion (geology) , electron mobility , field effect transistor , semiconductor , optoelectronics , channel (broadcasting) , condensed matter physics , electrical engineering , physics , engineering , geology , quantum mechanics , paleontology , voltage , structural basin
The problem of the spatial localization of free electrons in 4 H -SiC metal—oxide—semiconductor field effect transistors (MOSFETS) with an accumulation- and inversion-type n channel is theoretically analyzed. The analysis demonstrates that, in optimally designed accumulation transistors (ACCUFETs), the average distance from the surface, at which free electrons are localized, may be an order of magnitude larger than that in inversion MOSFETs. This can make 4 H -SiC ACCUFETs advantageous as regards the effective carrier mobility in a conducting channel.