Open AccessШирина линии излучения и alpha-фактор одномодовых вертикально-излучающих лазеров спектрального диапазона 850 нм на основе квантовых ям InGaAs/AlGaAs -=SUP=-*-=/SUP=-
Author(s) -
С.А. Блохин,
М.А. Бобров,
А.А. Блохин,
А.Г. Кузьменков,
А.П. Васильев,
Ю.М. Задиранов,
Е.А. Европейцев,
А.В. Сахаров,
N. N. Ledentsov,
Л.Я. Карачинский,
А.М. Оспенников,
Н.А. Малеев,
В.М. Устинов
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.01.45326.8657
Subject(s) - laser , quantum well , materials science , line (geometry) , optoelectronics , optics , aperture (computer memory) , line width , physics , atomic physics , geometry , mathematics , acoustics
The emission-line width for 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells is studied. The width of the emission line for a laser with a 2-μm oxide current aperture attains it minimum (~110 MHz) at an output power of 0.8 mW. As the optical output power is further increased, anomalous broadening of the emission line is observed; this is apparently caused by an increase in the α-factor as a result of a decrease in the differential gain in the active region under conditions of increased concentration of charge carriers and of high internal optical losses in the microcavity. The α-factor is estimated using two independent methods.