Open AccessОсобенности свойств полупроводников А-=SUP=-III-=/SUP=-В-=SUP=-V-=/SUP=- в мультизеренной наноструктуре
Author(s) -
Н.Д. Жуков,
В.Ф. Кабанов,
А. И. Михайлов,
Д.С. Мосияш,
А.А. Хазанов,
М.И. Шишкин
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.01.45323.8515
Subject(s) - semiconductor , terahertz radiation , materials science , infrared , current (fluid) , electron , detector , optoelectronics , semiconductor detector , analytical chemistry (journal) , physics , atomic physics , chemistry , optics , nuclear physics , chromatography , thermodynamics
The systematized results of studies of the properties of InAs, InSb, and GaAs semiconductors in a multigrain structure based on measurement and analysis of the current–voltage and spectral characteristics are presented. It is established that electron emission and injection are determined by the localization effects of states in the bulk and surface region of submicron grains. The phenomena of current limitation and lowfield emission characteristic of quantum dots are revealed and studied. The results can be used in studies and in the development of multigrain structures for gas and optical sensors, detectors, and emitters of infrared and terahertz ranges.