Open AccessМеханизм фазового перехода полупроводник-металл в тонких пленках состава Sm-=SUB=-1-x-=/SUB=- Gd-=SUB=-x-=/SUB=-S
Author(s) -
В.В. Каминский,
С.М. Соловьев,
Г.Д. Хавров,
Н.В. Шаренкова
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.01.45317.8606
Subject(s) - materials science , crystallite , flash evaporation , semiconductor , thin film , evaporation , phase transition , phase (matter) , vacuum evaporation , transition metal , analytical chemistry (journal) , metallurgy , crystallography , condensed matter physics , nanotechnology , chemistry , optoelectronics , thermodynamics , physics , biochemistry , organic chemistry , chromatography , catalysis
The influence of the Gd content on the semiconductor–metal phase transition in polycrystalline Sm_1– x Gd_ x S thin films produced by the flash evaporation of a powder in vacuum is studied. It is shown that the basic factor of the physical mechanism of the phase transition is compression of the film material. It is established that the films retain their semiconductor properties only up to a Gd content of x = 0.12.