Open AccessСпектры инфракрасного отражения пленок топологического изолятора Pb-=SUB=-1-x-=/SUB=-Sn-=SUB=-x-=/SUB=-Se (x=0.2, 0.34) на подложке ZnTe/GaAs и колебательные моды многослойных структур
Author(s) -
Н. Н. Новикова,
В.А. Яковлев,
И. В. Кучеренко,
V. S. Vinogradov,
Ю.А. Алещенко,
A. V. Muratov,
G. Karczewski,
S. Chusnutdinow
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.01.45316.8593
Subject(s) - spectral line , molecular beam epitaxy , phonon , materials science , substrate (aquarium) , dispersion relation , reflectivity , layer (electronics) , epitaxy , condensed matter physics , molecular physics , atomic physics , optics , chemistry , physics , nanotechnology , oceanography , astronomy , geology
The reflectance spectra of the topological insulator Pb_1– x Sn_ x Se ( x = 0.2, 0.34) films grown by molecular-beam epitaxy on a ZnTe/GaAs substrate are measured in the range of 12–2500 cm^–1 at room temperature. Using dispersion analysis, the frequencies of transverse optical phonons, plasma frequencies, highfrequency permittivities, and layer thicknesses are determined. In the quasi-steady-state approximation, the interface mode frequencies of the four-layer structure are calculated as a function of the overlap parameter χ_1 (0 ≤ χ_1 ≤ 1). The parameter describes the degree of overlap of two interface modes localized at planes bounding the layer to the right and left. The existence of interacting interface modes in the structure makes its spectrum different from the sum of component spectra. These differences manifest themselves in the experiment. The conditions of the interaction of interface modes with IR radiation are discussed.