Сверхбыстрая динамика электронно-дырочной плазмы в полупроводниковых нитевидных нанокристаллах -=SUP=-*-=/SUP=- | Zendy

В.Н. Трухин | Zendy; А.Д. Буравлев | Zendy; И.А. Мустафин | Zendy; Г.Э. Цырлин | Zendy; J. P. Kakko | Zendy; Harri Lipsanen | Zendy

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Сверхбыстрая динамика электронно-дырочной плазмы в полупроводниковых нитевидных нанокристаллах -=SUP=-*-=/SUP=-

Author(s) -

В.Н. Трухин,

А.Д. Буравлев,

И.А. Мустафин,

Г.Э. Цырлин,

J. P. Kakko,

Harri Lipsanen

Publication year - 2017

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2018.01.45313.40

Subject(s) - terahertz radiation , electron , nanowire , semiconductor , metalorganic vapour phase epitaxy , materials science , charge carrier , optoelectronics , epitaxy , plasma , electron mobility , atomic physics , condensed matter physics , physics , nanotechnology , layer (electronics) , quantum mechanics

Experimental results obtained in a study of the effect of electron–hole plasma on the generation of terahertz (THz) radiation in semiconductor nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) are presented. It is shown that the temporal dynamics of photoexcited charge carriers in semiconductor nanowires is determined by the transport of carriers, both electrons and holes, and by the time of capture of electrons and holes at surface levels.

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