Open AccessСверхбыстрая динамика электронно-дырочной плазмы в полупроводниковых нитевидных нанокристаллах -=SUP=-*-=/SUP=-
Author(s) -
В.Н. Трухин,
А.Д. Буравлев,
И.А. Мустафин,
Г.Э. Цырлин,
Joona-Pekko Kakko,
Harri Lipsanen
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.01.45313.40
Subject(s) - terahertz radiation , electron , nanowire , semiconductor , metalorganic vapour phase epitaxy , materials science , charge carrier , optoelectronics , epitaxy , plasma , electron mobility , atomic physics , condensed matter physics , physics , nanotechnology , layer (electronics) , quantum mechanics
Experimental results obtained in a study of the effect of electron–hole plasma on the generation of terahertz (THz) radiation in semiconductor nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) are presented. It is shown that the temporal dynamics of photoexcited charge carriers in semiconductor nanowires is determined by the transport of carriers, both electrons and holes, and by the time of capture of electrons and holes at surface levels.