Open AccessЭффективная масса и g-фактор электронов в широких квантовых ямах теллурида ртути -=SUP=-*-=/SUP=-
Author(s) -
С.В. Гудина,
В.Н. Неверов,
Е.В. Ильченко,
А.С. Боголюбский,
Г.И. Харус,
Н.Г. Шелушинина,
С.М. Подгорных,
М.В. Якунин,
Н.Н. Михайлов,
С.А. Дворецкий
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.01.45312.39
Subject(s) - magnetoresistance , condensed matter physics , quantum hall effect , plateau (mathematics) , landau quantization , magnetic field , electron , filling factor , activation energy , hall effect , quantum well , physics , effective mass (spring–mass system) , energy (signal processing) , chemistry , quantum mechanics , mathematics , mathematical analysis , laser , organic chemistry
The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors ν = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor (≅ 80) are obtained.