Open AccessXXI Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 13-16 марта 2017 г. Нитевидные нанокристаллы GaP/Si (111), синтезированные методом молекулярно-пучковой эпитаксии с переключением гексагональной и кубической фазy -=SUP=-*-=/SUP=-
Author(s) -
И.В. Штром,
Н.В. Сибирев,
Е.В. Убыйвовк,
Ю.Б. Самсоненко,
А.И. Хребтов,
Р.Р. Резник,
А.Д. Буравлев,
Г.Э. Цырлин
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.01.45310.27
Subject(s) - nanowire , nanometre , substrate (aquarium) , materials science , epitaxy , nanotechnology , catalysis , chemical engineering , crystallography , chemistry , composite material , layer (electronics) , geology , biochemistry , oceanography , engineering
A theoretical and experimental description of the synthesis of GaP nanowire crystals by molecularbeam epitaxy on Si(111) substrates with the use of gold as a catalyst is presented. The ratio between the fluxes of materials to be deposited and the substrate temperature are varied for a short time during nanowire synthesis in order to analyze the possibility of producing nanoinclusions of different polytypes. It is established that variations in the ratio between the fluxes of materials to be deposited and in the growth temperature bring about the controllable formation of inclusions, among them are structurally cubic crystalline regions. The inclusions are several nanometers thick.