Open AccessPerformance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts
Author(s) -
Yue-Gie Liaw,
WenShiang Liao,
MuChun Wang,
Chii-Wen Chen,
Deshi Li,
Haoshuang Gu,
Xuecheng Zou
Publication year - 2017
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2017.12.45190.8421
Subject(s) - conductance , materials science , equivalent series resistance , wafer , optoelectronics , channel (broadcasting) , electrical engineering , channel length modulation , current (fluid) , node (physics) , silicon on insulator , fin , short channel effect , mosfet , silicon , transistor , physics , composite material , engineering , voltage , condensed matter physics , acoustics
The length of Source/Drain (S/D) extension (L SDE ) of nano-node p-channel FinFETs (pFinFETs) on SOI wafer influencing the device performance is exposed, especially in drive current and gate/S/D leakage. In observation, the longer L SDE pFinFET provides a larger series resistance and degrades the drive current (I DS ), but the isolation capability between the S/D contacts and the gate electrode is increased. The shorter L SDE plus the shorter channel length demonstrates a higher trans-conductance (G m ) contributing to a higher drive current. Moreover, the subthreshold swing (S.S.) at longer channel length and longer L SDE represents a higher value indicating the higher amount of the interface states which possibly deteriorate the channel mobility causing the lower drive current. DOI: 10.21883/FTP.2017.12.45190.8421