Open AccessElectrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode
Author(s) -
R. Padma,
V. Rajagopal Reddy
Publication year - 2017
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2017.12.45189.8340
Subject(s) - equivalent series resistance , conductance , schottky diode , analytical chemistry (journal) , capacitance , relaxation (psychology) , materials science , schottky barrier , diode , biasing , condensed matter physics , chemistry , voltage , electrode , physics , optoelectronics , psychology , social psychology , chromatography , quantum mechanics
The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x10 17 cm -3 and 0.79 eV, respectively. The interface state density (N SS ) obtained from forward bias I-V characteristics by considering the series resistance (R S ) values are lower without considering the series resistance (R S ). Furthermore, the interface state density (N SS ) and relaxation time (tau) are also calculated from the experimental C-f and G-f measurements. The N SS values obtained from the I-V characteristics are almost three orders higher than the N SS values obtained from the C-f and G-f measurements. The experimental results depict that N SS and tau are decreased with bias voltage. The frequency dependence of the series resistance (R S ) is attributed to the particular distribution density of interface states. DOI: 10.21883/FTP.2017.12.45189.8340