Open AccessThe temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination
Author(s) -
Yu. G. Arapov,
С. В. Гудина,
А. С. Клепикова,
В. Н. Неверов,
G. I. Harus,
Н. Г. Шелушинина,
M. V. Yakunin
Publication year - 2017
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2017.02.44119.8302
Subject(s) - condensed matter physics , scaling , magnetic field , heterojunction , quantum hall effect , nanostructure , quantum well , gallium arsenide , quantum dot , materials science , physics , quantum mechanics , optoelectronics , nanotechnology , mathematics , laser , geometry
The dependences of the longitudinal and Hall resistances on a magnetic field in n-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields B=0-16 T and temperatures T=0.05-4.2 K. Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated. DOI: 10.21883/FTP.2017.02.44119.8302