The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination | Zendy

Yu. G. Arapov | Zendy; С. В. Гудина | Zendy; А. С. Клепикова | Zendy; В. Н. Неверов | Zendy; G. I. Harus | Zendy; Н. Г. Шелушинина | Zendy; M. V. Yakunin | Zendy

Open Access

The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination

Author(s) -

Yu. G. Arapov,

С. В. Гудина,

А. С. Клепикова,

В. Н. Неверов,

G. I. Harus,

Н. Г. Шелушинина,

M. V. Yakunin

Publication year - 2017

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2017.02.44119.8302

Subject(s) - condensed matter physics , scaling , magnetic field , heterojunction , quantum hall effect , nanostructure , quantum well , gallium arsenide , quantum dot , materials science , physics , quantum mechanics , optoelectronics , nanotechnology , mathematics , laser , geometry

The dependences of the longitudinal and Hall resistances on a magnetic field in n-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields B=0-16 T and temperatures T=0.05-4.2 K. Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated. DOI: 10.21883/FTP.2017.02.44119.8302

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